Band structures of Wurtzite InN and GaInN by all-electron calculation

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

Japanese Journal of Applied Physics, Part 2, 43(3B), p.L407 - L410, 2004/03

https://doi.org/10.1143/JJAP.43.L407

We report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in the approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps.